當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IHW30N135R5XKSA1
IGBT 晶(jing)體(ti)管(guan) TRENCHSTOP RC-H5 1200V IGBT
IGB15N65S5ATMA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPI120N08S403AKSA1
MOSFET N-CHANNEL 75/80V
IKW15N120BH6XKSA1
IGBT 晶(jing)體(ti)管(guan) INDUSTRY 14
IPB100N08S2L07ATMA1
MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
IPB65R280E6ATMA1
MOSFET N-Ch 700V 13.8A D2PAK-2
IPD040N03LGBTMA1
MOSFET N-Ch 30V 90A DPAK-2
IPD180N10N3GBTMA1
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
IRF150P220XKMA1
MOSFET TRENCH_MOSFETS
IRF150P221XKMA1
IFS150B12N3E4_B31
IGBT 模(mu)塊(kuai)
IFS100B12N3E4_B31
IGBT 模(mu)塊(kuai) MIPAQ BASE 1200V 100A
IPZ65R019C7
MOSFET N-Ch 700V 75A TO247-4
IPZ65R019C7XKSA1
IPW65R019C7
MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
IPW60R018CFD7XKSA1
MOSFET HIGH POWER_NEW
IPW60R017C7XKSA1
MOSFET
IPW65R048CFDAFKSA1
MOSFET N-Ch 650V 63.3A TO247-3
IPW65R041CFD
MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
IPB60R040C7ATMA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)