當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPA60R060P7XKSA1
MOSFET HIGH POWER_NEW
IRL40T209ATMA1
MOSFET
IPB65R110CFDA
MOSFET N-Ch 650V 99.6A D2PAK-2
IPB65R110CFDAATMA1
IPW65R110CFD
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
IPI110N20N3 G
MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3
IRF300P227
MOSFET IFX OPTIMOS
IPW60R080P7XKSA1
IPA028N08N3GXKSA1
MOSFET N-Ch 80V 89A TO220FP-3
IRF135SA204
MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg
IHW40N135R3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPB65R110CFDATMA1
MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2
IHW30N160R2
IGBT 晶(jing)體(ti)管(guan) RC-IGBT MONO DIODE 1600V 30A
IPB019N08N3 G
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
IPB180N10S402ATMA1
MOSFET N-Ch 100V 180A D2PAK-6
IRFSL3006PBF
MOSFET MOSFT 60V 270A 2.5mOhm 200nC
IPB038N12N3 G
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPP041N12N3 G
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
IPP041N12N3GXKSA1
IGW25N120H3FKSA1
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