當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC009NE2LS
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC011N03LS
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC010NE2LS
BSC014NE2LSI
BSC018NE2LSI
BSP298 H6327
MOSFET N-Ch 400V 500mA SOT-223-3
BSC076N06NS3 G
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSP149 H6906
MOSFET N-Ch 200V 140mA SOT-223-3
BSZ15DC02KD H
MOSFET SMALL SIGNAL+P-CH
BSZ0904NSI
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSC059N04LS G
MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3
BSZ097N04LS G
MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
BSP125H6433XTMA1
MOSFET N-Ch 600V 120mA SOT-223-3
BSP129 H6327
MOSFET N-Ch 240V 350mA SOT-223-3
BSS139 H6906
BSZ340N08NS3 G
MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3
BSS159N H6906
MOSFET N-Ch 60V 230mA SOT-23-3
BSL207SP H6327
BFP 640ESD H6327
射頻(RF)雙極(ji)晶體管 RF BIP TRANSISTORS
BSP88 H6327
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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