當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC093N04LS G
MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSC016N06NSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSC320N20NS3 G
MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
BSC190N15NS3 G
MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
BSC014N06NSATMA1
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
BSC100N06LS3 G
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSM100GP60
IGBT 模(mu)塊(kuai) 600V 100A PIM
BSM300GA170DLC
IGBT 模(mu)塊(kuai) 900V 300A IGBT MODULE
BSM150GB60DLC
IGBT 模(mu)塊(kuai) 600V 150A DUAL
BCP5616H6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
BCX5316H6327XTSA1
BCR08PNH6327XTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) AF DIGITAL TRANSISTOR
BCR 583 E6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 預(yu)偏(pian)置(zhi) PNP Silicon Digital TRANSISTOR
BCR 185W H6327
BCR 192W H6327
BCR 142W H6327
BCW60DE6327HTSA1
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) NPN Silicon AF TRANSISTOR
BCR 158W H6327
BCR 198S H6327
BCR 183S H6327
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