當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC090N03MSGXT
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSO203SP H
MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P
BSL606SNH6327XTSA1
MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A
BFP182RE7764HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BFP 450 H6433
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BSL806NH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BSM200GD60DLC
IGBT 模(mu)塊(kuai) 600V 200A 3-PHASE
BSM300GB120DLC
IGBT 模(mu)塊(kuai) 1200V 300A DUAL
BSM150GB170DLC
IGBT 模(mu)塊(kuai) 1700V 150A DUAL
BSM400GA120DN2
IGBT 模(mu)塊(kuai) 1200V 400A SINGLE
BSM200GB120DLC
IGBT 模(mu)塊(kuai) 1200V 200A DUAL
BSM100GB170DLC
IGBT 模(mu)塊(kuai) 1700V 100A DUAL
BSM150GB120DLC
IGBT 模(mu)塊(kuai) 1200V 150A DUAL
BSM50GP60
IGBT 模(mu)塊(kuai) 600V 50A PIM
BSM15GP60
IGBT 模(mu)塊(kuai) 600V 15A PIM
BSM10GD120DN2
IGBT 模(mu)塊(kuai) 1200V 10A FL BRIDGE
BDP 947 H6327
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTOR
BFN 38 H6327
BFN 39 H6327
BCP 53-16 H6433
雙(shuang)極(ji)晶(jing)體(ti)管(guan) - 雙(shuang)極(ji)結(jie)型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTORS
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
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