當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD15N06S2L64ATMA2
MOSFET N-CHANNEL_55/60V
IPZ40N04S5L2R8ATMA1
MOSFET N-CHANNEL_30/40V
IPD30N06S2L23ATMA3
IPZ40N04S5L7R4ATMA1
IPA65R045C7
MOSFET HIGH POWER BEST IN CLASS
IPZ65R065C7
MOSFET HIGH POWER_NEW
IPW65R125C7
IPP60R120C7XKSA1
IPB180N10S403ATMA1
MOSFET N-CHANNEL_100+
IPB240N04S4R9ATMA1
IPB80N04S204ATMA2
IRL40B215
MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl
IPD50N06S2L13ATMA2
IPT65R105G7XTMA1
MOSFET
IKW30N65NL5XKSA1
IGBT 晶體管 650V IGBT Trenchstop 5
IPP076N15N5AKSA1
IKW30N60DTPXKSA1
IGBT 晶體管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IPD80R280P7ATMA1
IPD30N06S2L13ATMA4
IPL65R099C7AUMA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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