當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB073N15N5ATMA1
MOSFET
IPA60R125P6
MOSFET HIGH POWER PRICE/PERFORM
IPA60R125P6XKSA1
IPP111N15N3GXKSA1
MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3
IPDD60R125G7XTMA1
MOSFET HIGH POWER_NEW
IPA65R150CFDXKSA1
MOSFET N-Ch 700V 22.4A TO220FP-3
IPP60R120P7XKSA1
IPA60R120P7XKSA1
IPL60R160CFD7AUMA1
IHW15N120R3FKSA1
IGBT 晶(jing)體(ti)管(guan) IH SeriesRev Conduct IGBT Monolithic Body
IGW30N60TPXKSA1
IGBT 晶(jing)體(ti)管(guan) The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IPL60R180P6AUMA1
IPL60R180P6
IPP65R190C7FKSA1
IPP60R180C7XKSA1
IPB180N04S4-H0
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
IPA80R280P7XKSA1
IPAN80R280P7XKSA1
MOSFET LOW POWER_NEW
IKB20N60H3
IGBT 晶(jing)體(ti)管(guan) 600v Hi-Speed SW IGBT
IRFSL3207ZPBF
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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